Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-02-24
1998-05-12
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, 438250, 438253, H01G 706, H01L 218239
Patent
active
057504199
ABSTRACT:
One or more dielectric layers (32, 52) are formed over a ferroelectric capacitor (24) of a FENVM cell, where that the tension within the dielectric layers (32, 52) overlying the ferroelectric capacitor (24) is kept relatively low. By keeping the tension relatively low, the nonvolatile polarization of the FENVM cell is maintained during back end processing steps of a fabrication process.
REFERENCES:
patent: 4091406 (1978-05-01), Lewis
patent: 4091407 (1978-05-01), Williams et al.
patent: 4097889 (1978-06-01), Kern et al.
patent: 4446194 (1984-05-01), Candelaria et al.
patent: 4620986 (1986-11-01), Yau et al.
patent: 4625227 (1986-11-01), Hara et al.
patent: 4733289 (1988-03-01), Tsurumaru
patent: 5046043 (1991-09-01), Miller et al.
patent: 5327012 (1994-07-01), Yano et al.
patent: 5401680 (1995-03-01), Abt et al.
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5583077 (1996-12-01), Wang et al.
patent: 5624864 (1997-04-01), Arita et al.
Sze, VLSI technology, pp. 116, 119, 123, 1983.
Stanley Wolf Ph.D, "Silicon Processing for the VLSI Era", vol. 2: Process Integration, Lattice Press 1990, Semiconductor Memory Process Integration., pp. 635-638.
Meyer George R.
Motorola Inc.
Tsai Jey
LandOfFree
Process for forming a semiconductor device having a ferroelectri does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for forming a semiconductor device having a ferroelectri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a semiconductor device having a ferroelectri will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-978665