Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1999-07-15

2000-11-14

Morgan, Eileen P.

Abrading

Abrading process

Glass or stone abrading

451285, 451 59, 451287, 451165, 451274, B24B 100

Patent

active

061462500

ABSTRACT:
Vibrating and oscillating rates can be dynamically changed during polishing to achieve an optimal polishing process. A semiconductor device substrate (34) has a first layer with a first film (12) and a second film (10) that overlies the first film (12), where the first film (12) is harder and underlies the second film (10). In one embodiment, the substrate (34) is placed over a first region (66) of a polishing pad (60). The second film (10) is polished at a first vibrating and oscillating rates over the first region (66). An endpoint signal is received when the first film (12) is reached. The substrate (34) is moved to a second region (62) of the polishing pad (60) that is closer to the edge of the pad and has a higher feature density compared to the first region (66). Polishing is performed at a second vibrating and oscillating rates that are different from the first vibrating and oscillating rates to remove the first film (10).

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