Metal working – Barrier layer or semiconductor device making
Patent
1997-03-31
2000-05-30
Monin, Jr., Donald L.
Metal working
Barrier layer or semiconductor device making
414935, 414937, 414940, H01L 2100
Patent
active
060686685
ABSTRACT:
A method for forming a semiconductor device in a semiconductor device manufacturing apparatus (20) having a sensor (30) activated extensible shuttle (28). In a fabrication environment shuttle (28) is housed within semiconductor device manufacturing apparatus (20), where an outer door (32) is closed flush with an outer wall of the apparatus (20). As a substrate carrier (38) is moved near the apparatus (20), sensor (30) activates opening of outer door (32) and extension of shuttle (28) out of the apparatus (20) into the fabrication environment. In one embodiment, shuttle (28) has a sensor which is used to determine if carrier (38) is placed on shuttle (28) within a predetermined time, allowing retraction of shuttle (28) until it is required. The present invention increases the available operative space within the fabrication environment, and provides a clean mini-environment within apparatus (20).
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Dietrich Michael
Godsey Sandra L.
Meyer George R.
Monin, Jr. Donald L.
Motorola Inc.
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