Process for forming a Schottky barrier gate

Details Process for forming a Schottky barrier gate Process for forming a Schottky barrier gate

1990-09-17

1992-05-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437176, 437179, 437184, 148DIG105, 148DIG100, 148DIG140, H01L 21265

Patent

active

051127636

ABSTRACT:
Provided is a process for precisely forming a Schottky barrier gate on GaAs. In the process, a layer of polyimide is spun onto a doped GaAs substrate having a passivating layer thereon. A resist layer is then spun onto the polyimide, and either deep ultraviolet lithography in conjunction with a clear field mask, or direct electron beam exposure, is used to define a gate region. After exposure, the resist is developed, leaving the unexposed portion of the resist in place on the polyimide layer. A metal transfer layer is then deposited over the structure, and the remaining resist is dissolved leaving a hole in the metal transfer layer. The polyimide and the passivating layer are etched down to the surface of the substrate through the passivating layer. The substrate is then dry etched, and then wet chemical etched to form a recess for the Schottky gate. The Schottky gate metal is deposited onto the surface of the structure and through the hole onto the substrate. The polyimide is dissolved and the upper layers lifted off leaving the Schottky metal gate deposited in the exposed recess in the GaAs substrate.

REFERENCES:
patent: 4517730 (1985-05-01), Meignant
patent: 4525919 (1985-07-01), Fabian
patent: 4546066 (1985-10-01), Field et al.
patent: 4551905 (1985-11-01), Chao et al.
patent: 4599790 (1986-07-01), Kim et al.
patent: 4618510 (1986-10-01), Tan
Hu et al., "Metal-on-Polymer Masks for Ion Beam Processing", 10th International Conf. on Electron and Ion Beam Science and Technology, Montreal Canada May 1982.

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