Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1998-01-12
2000-03-28
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
427579, 427237, 427238, 427 99, 438756, 438435, 438790, 438905, C23C 1640, H01L 2131
Patent
active
060428872
ABSTRACT:
A method of manufacturing an insulating layer 30 (IMD layer) that has a uniform etch rate and forms improved via/contact opening profiles. The method forms a coating film 11 of silicon oxide over the chamber walls 22 of a CVD reactor. Next, the wafer 12 is loaded into the CVD reactor 20. A first insulating layer 30 composed of oxide preferably formed by a sub-atmospheric undoped silicon glass (SAUSG) using TEOS is formed over the semiconductor structure 12. Via/Contact Openings 32 are then etched in the insulating layer 30. The coating film 11 over the interior surfaces (e.g., reactor walls) 22 improves the etch rate uniformity of the first insulating layer 30. The first insulating layer 30 is preferably a inter metal dielectric (IMD) layer.
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Chien Hung-Ju
Lin Been-Hon
Wang Chia-Cheng
Ackerman Stephen B.
King Roy V.
Saile George O.
Stoffel William J.
Taiwan Semiconductor Manufacturing Company
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