Process for forming a phosphor

Fishing – trapping – and vermin destroying

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437 4, 427 68, 427 70, 4271262, 427257, 427267, 427294, 4273761, H01L 3118, B05D 512

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054609801

ABSTRACT:
The growth of a phosphor layer deposited on a patterned substrate containing a multiplicity of recessed ridges of triangular cross section can be controlled by tailoring the geometry of the recessed ridge structures. During the deposition process, little or no phosphor deposition occurs on the recessed ridge structures, and cracks are formed which separate the otherwise uniformly growing phosphor which is present in other regions of the patterned substrate where more substantial phosphor deposition occurs.

REFERENCES:
patent: 3783297 (1974-01-01), Houston
patent: 3783298 (1974-01-01), Houston
patent: 3783299 (1974-01-01), Houston
patent: 3825763 (1974-07-01), Ligtenberg et al.
patent: 4011454 (1977-03-01), Lubowski et al.
patent: 4069355 (1978-01-01), Lubowski et al.
patent: 4209705 (1980-06-01), Washida et al.
patent: 4236077 (1980-11-01), Sonoda et al.
patent: 4437011 (1984-03-01), Noji et al.
patent: 5153438 (1992-10-01), Kingsley et al.
patent: 5171996 (1992-12-01), Perez-Mendez
patent: 5302423 (1994-04-01), Tran et al.
patent: 5368882 (1994-11-01), Tran et al.
"Enhanced Structure in CsI Layer by Substrate Patterning", Jing et al., IEEE Trans. Nucl. Sci., vol. 39, No. 5 (Oct. 1992).

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