Process for forming a multilayer polysilicon semiconductor elect

Details Process for forming a multilayer polysilicon semiconductor elect Process for forming a multilayer polysilicon semiconductor elect

1991-02-14

1993-07-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437193, H01L 21283

Patent

active

052310523

ABSTRACT:
A method for forming a multilayer contact to a device region through an insulating layered structure is described. An opening is formed through the insulating layered structure to the device region. A barrier metal layer is deposited over the device region and the insulating layered structure both above and on the sides of the opening. An in situ doped polysilicon layer is deposited over the barrier metal layer. A thin layer of metal is deposited over the polysilicon layer. The remaining portion of the opening is filled and the thin layer of metal is covered with undoped polysilicon. The undoped polysilicon is etched until the thin metal film is reached to thereby leave the opening filled. An aluminium metallurgical layer is deposited thereover to complete the multilayer contact.

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"A High-Performance Sub-Half Micron CMOS Technology for Fast SRAMs", IEDM, 1989, pp. 417-420. CH26377/89/0000-0417.

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