Process for forming a MOSFET

Details Process for forming a MOSFET Process for forming a MOSFET

1992-10-13

1994-03-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437233, 437238, 437913, 148DIG117, H01L 21265

Patent

active

052984435

ABSTRACT:
A MOSFET comprising a gate oxide layer on a silicon substrate, a polysilicon gate formed on the gate oxide layer, the width of which gradually widens going from bottom to top, a side gate oxide layer formed by an oxidation process surrounding the polysilicon gate, the side gate oxide layer also gradually widening from bottom to top, a source/drain region beside the gate oxide layer, a connection element having a stacked structure of an oxide layer and a polysilicon or polycide layer on the field oxide, a doped polysilicon side wall beside the side gate oxide layer and making electric connection between the source/drain region and the connection element.

REFERENCES:
patent: 4442591 (1984-04-01), Haken
patent: 4939154 (1990-07-01), Shimbo
patent: 5073510 (1991-12-01), Kwon et al.
patent: 5141891 (1992-08-01), Arima et al.
patent: 5175118 (1992-12-01), Yoneda
patent: 5196357 (1993-03-01), Boardman et al.

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