Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate
2005-02-22
2005-02-22
Silverman, Stanley S. (Department: 1754)
Chemistry of inorganic compounds
Silicon or compound thereof
Oxygen containing
C423S342000
Reexamination Certificate
active
06858195
ABSTRACT:
The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes selected from: (a) an organofluoro silane containing two silicon atoms linked by one oxygen atom; (b) an organofluoro silane containing two silicon atoms linked by one or more carbon atoms, where the one or more carbon atoms each are bonded to one or more fluorine atoms, or to one or more organofluoro moieties, or to a combination thereof; and (c) an organofluoro silane containing a silicon atom bonded to an oxygen atom. The invention also provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes that include one or more organofluoro silanes characterized by the presence of Si—O bonds.
REFERENCES:
patent: 3012861 (1961-12-01), Ling
patent: 3178392 (1965-04-01), Kriner
patent: 3652331 (1972-03-01), Yamazaki
patent: 3832202 (1974-08-01), Ritchie
patent: 3920865 (1975-11-01), Läufer et al.
patent: 4705725 (1987-11-01), Glajch et al.
patent: 4771328 (1988-09-01), Malaviya et al.
patent: 5152819 (1992-10-01), Blackwell et al.
patent: 5194333 (1993-03-01), Ohnaka et al.
patent: 5314845 (1994-05-01), Lee et al.
patent: 5364800 (1994-11-01), Joyner
patent: 5376595 (1994-12-01), Zupancic et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5558718 (1996-09-01), Leung
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5571571 (1996-11-01), Musaka et al.
patent: 5580429 (1996-12-01), Chan et al.
patent: 5628871 (1997-05-01), Shinagawa
patent: 5675187 (1997-10-01), Numata et al.
patent: 5688724 (1997-11-01), Yoon et al.
patent: 5858879 (1999-01-01), Chao et al.
patent: 5864172 (1999-01-01), Kapoor et al.
patent: 5874367 (1999-02-01), Dobson
patent: 5874745 (1999-02-01), Kuo
patent: 5878649 (1999-03-01), Raab
patent: 5882489 (1999-03-01), Bersin et al.
patent: 5904154 (1999-05-01), Chien et al.
patent: 5915203 (1999-06-01), Sengupta et al.
patent: 5930655 (1999-07-01), Cooney III
patent: 5939763 (1999-08-01), Hao et al.
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6020458 (2000-02-01), Lee et al.
patent: 6025263 (2000-02-01), Tsai et al.
patent: 6028015 (2000-02-01), Wang et al.
patent: 6037248 (2000-03-01), Ahn
patent: 6043145 (2000-03-01), Suzuki et al.
patent: 6043167 (2000-03-01), Lee et al.
patent: 6051073 (2000-04-01), Chu et al.
patent: 6051477 (2000-04-01), Nam
patent: 6054379 (2000-04-01), Yau et al.
patent: 6063702 (2000-05-01), Chung
patent: 6066574 (2000-05-01), You et al.
patent: 6114259 (2000-09-01), Sukharev et al.
patent: 6147012 (2000-11-01), Sukharev et al.
patent: 6153524 (2000-11-01), Henley et al.
patent: 6204192 (2001-03-01), Zhao et al.
patent: 6207585 (2001-03-01), Hasegawa et al.
patent: 6215087 (2001-04-01), Akahori et al.
patent: 6232658 (2001-05-01), Catabay et al.
patent: 6303047 (2001-10-01), Aronowitz et al.
patent: 6316354 (2001-11-01), Hu
patent: 6365528 (2002-04-01), Sukharev et al.
patent: 6391795 (2002-05-01), Catabay et al.
patent: 6508997 (2003-01-01), Choate et al.
patent: 6511925 (2003-01-01), Aronowitz et al.
patent: 198 04 375 (1999-07-01), None
patent: 0 706 216 (1996-04-01), None
patent: 0 949 663 (1999-10-01), None
patent: 63003437 (1988-01-01), None
patent: 2000-267128 (2000-09-01), None
patent: WO9941423 (1999-08-01), None
Bothra, S., et al., “Integration of 0.25 μm Three and Five Level Interconnect System for High Performance ASIC”,1997 Proceedings Fourteenth International VMIC Conference, Santa Clara, CA, Jun. 10-12, 1997, pp. 43-48.
Dobson, C.D., et al., “Advanced SiO2Planarization Using Silane and H2O2”,Semiconductor International, Dec. 1994, pp. 85-88.
McClatchie, S., et al., “Low Dielectric Constant Oxide Films Deposited Using CVD Techniques”,1998 Proceedings Fourth International DUMIC Conference, Feb. 16-17, 1998, pp. 311-318.
Nguyen, S. et al., “Reaction Mechanisms of Plasma- and Thermal-Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films”,J. Electrochem. Soc., vol. 137, No. 7, Jul., 1990, pp. 2209-2215.
Peters, Laura, “Low-k Dielectrics: Will Spin-On or CVD Prevail?”,Semiconductor International, vol. 23, No. 6, Jun., 2000, pp. 108-110, 114, 116, 118, 122, and 124.
Peters, Laura, “Pursuing the Perfect Low-k Dielectric”,Semiconductor International, vol. 21, No. 10, Sep., 1998, pp. 64-66, 68, 70, 72, and 74.
Sugahara, Satoshi, et al., “Chemical Vapor Deposition of CF3-Incorporated Silica Films for Interlayer Dielectric Application”, 1999 Joint International Meeting,Electrochemical Society Meeting Abstracts, vol. 99-2, 1999, Abstract No. 746, no month.
Koda, Seiichiro, et al., “A Study of Inhibition Effects for Silane Combustion by Additive Gases”,Combustion and Flame, vol. 73, No. 2, Aug., 1988, pp. 187-194.
Aronowitz Sheldon
Zubkov Vladimir
Johnson Edward M.
LSI Logic Corporation
Silverman Stanley S.
Taylor John P.
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