Process for forming a high gain, wide bandgap gallium nitride ph

Details Process for forming a high gain, wide bandgap gallium nitride ph Process for forming a high gain, wide bandgap gallium nitride ph

1997-01-27

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 57, H01L 2102

Patent

active

059239530

ABSTRACT:
A process for forming a UV sensitive gallium nitride layer includes a step of depositing a layer of aluminum nitride on which the gallium nitride layer is deposited. Two tests, sheet resistance and photoluminescent response of the gallium nitride layer, allow one to determine that a particular gallium nitride layer produced by the process will have the required response to UV radiation. Either a careful calibration which determines a required length of the aluminum nitride deposition time, or the introduction of silicon into the gallium nitride layer during its deposition, has been found to result in deposit of a gallium nitride layer which has superior UV sensing characteristics.

REFERENCES:
patent: 4614961 (1986-09-01), Khan et al.
patent: 5182670 (1993-01-01), Khan et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5677538 (1997-10-01), Moustakas et al.

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