Process for forming a functional deposited film

Details Process for forming a functional deposited film Process for forming a functional deposited film

1995-05-02

1996-10-15

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

427563, 427564, 427571, B05D 306

Patent

active

055652476

ABSTRACT:
A process for forming a functional deposited film by way of RF plasma CVD process, comprising generating plasma in a substantially enclosed plasma generation chamber provided with an electrode arranged at the periphery of said plasma generation chamber by applying a RF power through said electrode into said plasma generation chamber, and forming said functional deposited film on a substrate placed in a deposition chamber communicated with said plasma generation chamber, wherein said substrate is arranged so as to isolate from a zone where said plasma is generated, characterized by comprising causing a magnetic field in said plasma generation chamber by means of a magnetic field generation means such that a magnetic flux density with a maximum intensity in the range of from 500 to 1000 Gauss is provided on the inner wall face side of and in parallel to the inner wall face of said plasma generation chamber; supplying a plasma generating raw material gas to a zone where said magnetic field resides; applying a RF power through said electrode to said zone to excite and decompose said plasma generating raw material gas thereby forming a high density plasma region localized in a doughnut-like shaped state while producing active species; introducing a film-forming raw material gas reactive with said active species into said deposition chamber to chemically react said film-forming raw material gas with said active species, wherein a ratio of Nee/Nes which is expressed by a ratio between an electron density Nes in the vicinity of said substrate and an electron density Nee in the vicinity of said electrode is adjusted to be 100 or more, and the relationship between a distance D between said electrode and said substrate and an inner pressure P in said deposition chamber is adjusted to satisfy the equation 0.5.ltoreq.P.times.D.ltoreq.5, whereby the formation of a functional deposited film is caused on said substrate.

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