Process for forming a doped oxide film and doped semiconductor

Details Process for forming a doped oxide film and doped semiconductor Process for forming a doped oxide film and doped semiconductor

1985-07-17

1986-08-12

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

427 85, 428446, H01L 21385

Patent

active

046054502

ABSTRACT:
A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a soluble dopant element compound to form a homogeneous, polyorganosiloxane-dopant compound solution. The solution is coated onto a semiconductor wafer substrate material and heated to produce an impurity doped semiconductor wafer suitable for electronic application.

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