Process for forming a doped oxide film and doped semiconductor

Details Process for forming a doped oxide film and doped semiconductor Process for forming a doped oxide film and doped semiconductor

1982-02-11

1986-02-18

Robinson, Ellis P.

Stock material or miscellaneous articles

Composite

Of silicon containing

148188, 427 85, 428447, 428696, 428704, H01L 2318, B32B 904

Patent

active

045713669

ABSTRACT:
A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a soluble dopant element compound to form a homogeneous, polyorganosiloxane-dopant compound solution. The solution is coated onto a semiconductor wafer substrate material and heated to produce an impurity doped semiconductor wafer suitable for electronic application.

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