Process for forming a doped oxide film and composite article

Details Process for forming a doped oxide film and composite article Process for forming a doped oxide film and composite article

1986-01-27

1986-10-28

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148190, 427 85, 428446, H01L 21385

Patent

active

046197192

ABSTRACT:
A process for forming a doped oxide film suitable for doping a semiconductor wafer substrate material and composite article. A silicon tetra-alkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorganosiloxane is subsequently admixed with a reactive dopant source to form a soluble metallosiloxane polymer. The metallosiloxane polymer is coated onto a semiconductor wafer substrate material to produce a metallosiloxane-wafer composite article. The composite article is heated to produce an impurity doped semiconductor wafer suitable for electronic applications.

REFERENCES:
patent: 3640093 (1972-02-01), Levene et al.
patent: 3658584 (1972-04-01), Schmidt
patent: 3660156 (1972-05-01), Schmidt
patent: 4236948 (1980-12-01), Seibold et al.
patent: 4251285 (1981-02-01), Yoldas et al.

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