Process for forming a deposited film from two mutually reactive

Details Process for forming a deposited film from two mutually reactive Process for forming a deposited film from two mutually reactive

1991-01-10

1992-06-30

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272552, 4272481, 427 42, 427 451, C23C 1600, B05D 306

Patent

active

051261693

ABSTRACT:
A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.

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