Process for forming a contact region between layers of polysilic

Details Process for forming a contact region between layers of polysilic Process for forming a contact region between layers of polysilic

1978-03-27

1979-12-18

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 357 59, 29576C, B01J 1700

Patent

active

041786742

ABSTRACT:
A process for forming an electrical contact region between layers of polysilicon with an integral polysilicon resistor during the fabrication of MOS integrated circuits is disclosed. The contact region which does not require critical alignments, may be formed directly over an active channel or buried (substrate) contact. A silicon nitride mask is formed at the location of the contact region on the first polysilicon layer thereby allowing a thick oxide to be grown on the remainder of the substrate. After removal of the silicon nitride mask, a second polysilicon layer is formed which contacts the first layer at the contact region and defines the resistor. A doping step is used to establish the resistance of the resistor. The process permits the fabrication, by way of example, of a static (bistable) MOS memory cell employing polysilicon loads with an area of approximately 1.5 mils.sup.2.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 4016587 (1977-04-01), De La Moueda
patent: 4085498 (1978-04-01), Rideout

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