Process for forming a conductive layer for semiconductor devices

Details Process for forming a conductive layer for semiconductor devices Process for forming a conductive layer for semiconductor devices

1993-11-12

1995-02-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437192, 437194, H01L 21283

Patent

active

053937031

ABSTRACT:
An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.

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Wolf, Silicon Processing, Lattice Press, 1990, vol. 2, pp. 110-111, 132-133.
Ogawa, et al.; "A Novel Al-Sc (Scandium) Alloy for Future LSI Interconnection;" IEDM; pp. 277-280 (1991).
Onuki, et al.; "High-Reliability Interconnections for ULSI Using Al-Si-Pd-Nb/Mo Layered Films;" IEEE Transactions on Electron Devices; vol. 39, No. 6; pp. 1322-1326 (Jun. 1992).
D'Heurle; "The Effect of Copper Additions on Electromigration in Aluminum Thin Films;" Metallurgical Transactions; vol. 2; pp. 683-689 (1971).
Gangulee, et al.; "Effect of Alloy Additions on Electromigration Failures in Thin Aluminum Films;" Applied Phys. Let.; vol. 19, No. 3; pp. 76-77 (1971).

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