Process for forming a capacitor having a metal-oxide dielectric

Details Process for forming a capacitor having a metal-oxide dielectric Process for forming a capacitor having a metal-oxide dielectric

1995-04-28

1996-12-10

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055830684

ABSTRACT:
A capacitor with a metal-oxide dielectric layer is formed with an upper electrode layer that is electrically connected to an underlying circuit element. The capacitor may be used in forming storage capacitors for DRAM and NVRAM cells. After forming an underlying circuit element, such as a source/drain region of a transistor, a metal-oxide capacitor is formed over the circuit element. An opening is formed through the capacitor and extends to the circuit element. An insulating spacer is formed, and a conductive member is formed that electrically connects the circuit element to the upper electrode layer of the metal-oxide capacitor. Devices including DRAM and NVRAM cells and methods of forming them are disclosed.

REFERENCES:
patent: 4251326 (1981-02-01), Arcidiacono et al.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 4985718 (1991-01-01), Ishijima
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5155573 (1992-10-01), Abe et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5191510 (1993-03-01), Huffman
patent: 5196909 (1993-03-01), Chan et al.
patent: 5254217 (1993-10-01), Maniar et al.
patent: 5257238 (1993-10-01), Lee et al.
patent: 5258093 (1993-11-01), Maniar
patent: 5283462 (1994-02-01), Stengel
patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5313089 (1994-05-01), Jones, Jr.
patent: 5329486 (1994-07-01), Lage
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5426561 (1995-06-01), Yen et al.
"3rd International Syposium on Integrated Ferroelectrics"; ISIF-91; University of Colorado at Colorado Springs; pp. 414-430 (1991).
Wu, et al; "Integr. of Ferroelectric PZT Capacitors with GaAs JFET Devices"; Proceed. of the 3rd Internat'l Symp. on Integ. Ferroelectrics; McDonnell Douglass Elect. Sys. Co.; pp. 390-403 (1991).
Kinney, et al.; "A Non-Volatile Memory Cell Based on Ferroelectric Storage Capacitors"; IEDM; pp. 850-851 (1987).
Wolf; "Silicon Processing for the VLSI Era"; vol. 2; pp. 635-638 (1990).
Jones, et al.; U.S. Appl. No. 08/397,302 filed on Mar. 1, 1995.

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