Process for formation of memory cell where capacitor is disposed

Details Process for formation of memory cell where capacitor is disposed Process for formation of memory cell where capacitor is disposed

1994-03-07

1995-05-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

054181771

ABSTRACT:
A semiconductor memory cell and a process for formation thereof is disclosed. A capacitor is disposed below a transistor, so that a DRAM cell that may be suitable for a high density semiconductor device is produced. A semiconductor device according to the present invention includes: a buried capacitor consisting of a storage electrode, a dielectric layer and a plate electrode formed on a substrate in a planar form; and a transistor formed above the capacitor, a source/drain region of the transistor being connected to the storage electrode of the capacitor.

REFERENCES:
patent: 5113235 (1993-05-01), Tamakoshi
patent: 5272103 (1993-12-01), Nakamura
patent: 5292677 (1994-03-01), Dennison

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