Process for formation of LDD transistor, and structure thereof

Details Process for formation of LDD transistor, and structure thereof Process for formation of LDD transistor, and structure thereof

1993-06-10

1995-02-14

Fourson, George

Fishing, trapping, and vermin destroying

437909, 437 41, H01L 21265

Patent

active

053895576

ABSTRACT:
A process for formation of an LDD transistor and a structure thereof are disclosed in which the junction capacitance and the body effect can be properly reduced. In the conventional LDD transistors, the punch-through problem is serious, and the improved conventional LDD transistor also, there is a limit in increasing the channel concentration, as well as the body effect being increased. The present invention gives solutions to the above problems by arranging that the junction thicknesses of n+ source and drain become smaller than the junction thicknesses of n- regions, and that a p type pocket 6 be formed only near a gate and a p type pocket 6.

REFERENCES:
patent: 5166086 (1992-11-01), Takada et al.

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