Fishing – trapping – and vermin destroying
Patent
1993-04-13
1995-03-14
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437107, 437132, 437133, 437946, 117 88, 117 90, H01L 2120
Patent
active
053977386
ABSTRACT:
A process of the formation of heteroepitaxy including heating a silicon substrate in gas ambience including one of a hydride of a IIIB group element and an organic substance of a IIIB group element, having the IIIB group element remain on the surface of the silicon substrate, and growing a GaAs film on a surface of the silicon substrate after the heat processing. Particles remaining on an inner wall or the like of a film forming apparatus are prevented from reaching the surface, and a IIIB group element remains on the surface after preprocessing. Such a GaAs film formed on the surface includes less unevenness and crystal defects.
REFERENCES:
patent: 4808551 (1989-02-01), Mori et al.
"AsH.sub.3 preflow effects on initial stages of GaAs grown on Si by metalorganic chemical vapor deposition," Fujita, Kazuhisa and Koyu Asai, Applied Physics Letter 59 (26), Dec. 23, 1991, pp. 3458-3460.
Bringans et al. in "The effect of a Ga prelayer on the beginning of a GaAs epitaxy on Si" in J. Appl. Phys. 64(7), Oct. 1988, pp. 3472-3475.
Georgakilas et al. "Achievements and limitations in optimised GaAs films grown on Si by molecular beam epitaxy" J. Appl. Phys 71(6), 15 Mar. 1992, pp. 2679-2701.
Lee in "MBE growth of low dislocation and high mobility GaAs on Si" Mat. Res. Soc. Sym. Proc. vol. 67, (1986), pp. 29-36.
Breneman R. Bruce
Fujitsu Ltd.
Paladugu Ramamohan Rao
LandOfFree
Process for formation of heteroepitaxy does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for formation of heteroepitaxy, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for formation of heteroepitaxy will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-713581