Process for filling an isolation trench

Details Process for filling an isolation trench Process for filling an isolation trench

1993-05-28

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437228, 437238, H01L 21302

Patent

active

054200652

ABSTRACT:
A process for filling an isolation trench with a dielectric is described. The deposition pressure of a gas from which a silicon dioxide dielectric is deposited in a trench is changed on a real-time basis during such deposition. Such pressure gradually increases from about 20 mTORR to 900 mTORR. The result is that particle generation during the initial stages of the deposition is maintained at a low rate, while the high pressure needed to provide deposition in a trench as it is filled is provided.

REFERENCES:
patent: 4980311 (1990-12-01), Namose
patent: 5173436 (1992-12-01), Gill et al.
patent: 5173439 (1992-12-01), Dash et al.
patent: 5175123 (1992-12-01), Vasquez et al.
patent: 5182221 (1993-01-01), Sato
patent: 5262002 (1993-11-01), Grewel et al.
Wolf et al., "Silicon Processing for the VLSI Era, Vol. I", pp. 183-187, 1986.

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