Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-08-24
1984-01-24
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29591, 148 15, 148187, H01L 21283, H01L 21225
Patent
active
044267657
ABSTRACT:
A process and related product in which ohmic contacts are formed in semiconductor devices employing compound substrates such as gallium arsenide. In the disclosed embodiment, a germanium layer (18) is deposited in those areas (14) in which ohmic contact is required and is subsequently diffused into a layer 20 of the substrate during a conventional annealing step required to relieve damage caused to the substrate during a prior conventional ion implantation step. As a result of the diffusion of the germanium, good ohmic contact can be made by deposition of a conductive metal 26, such as gold. Thus, a common metalization step can be employed to form both the ohmic contact regions and rectifying contact regions used as gates in field effect transistors.
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Mills Thomas G.
Shahriary Iradj
Heal Noel F.
Keller Robert W.
Nyhagen Donald R.
Ozaki G.
TRW Inc.
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