Process for fabrication of monolithic transistor coupled electro

Metal working – Plural diverse manufacturing apparatus including means for... – Common reciprocating support for spaced tools

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29576E, 29572, 29591, 148171, 148175, H01L 2120

Patent

active

044399103

ABSTRACT:
Modulated signal levels in the range of 1 .mu.V, as is typical for radar returns, can be used to achieve a useful modulated optical signal that can be launched into a fiber optic waveguide for transmission to a remote location for signal processing. The device of the invention achieves such a conversion by suitably integrating a high gain bipolar transistor with an electroluminescent diode, such as a light emitting diode or diode laser, into a compact monolithic structure.
In one structural configuration, the bipolar transistor comprises an emitter comprising a layer of doped n-(Al,Ga)As supported on a base comprising a layer of doped p-GaAs, in turn supported on a collector comprising a layer of undoped n-GaAs or n-(Al,Ga)As. The electroluminescent diode in this embodiment comprises a light-emitting diode formed by a p-n junction between the undoped n-GaAs or n-(Al,Ga)As layer and a supporting doped p-GaAs layer, in turn supported on a doped p.sup.+ -GaAs substrate. Collector contact is made to the backside of the substrate.
An electrical signal at the base is amplified by transistor action, resulting in a high gain optical output by the LED, which may be launched into an optical fiber in either a Burrus or edge-emitting configuration. Direct optical amplification of optical radiation may be made by omitting electrical contact to the base and introducing the optical radiation into the emitter.

REFERENCES:
patent: 2569347 (1951-09-01), Schockley
patent: 4136928 (1979-01-01), Logan et al.
patent: 4137107 (1979-01-01), Nijman et al.
patent: 4233090 (1980-11-01), Hawrylo et al.
patent: 4249967 (1981-02-01), Liu et al.
patent: 4269635 (1981-05-01), Logan et al.
patent: 4388633 (1983-06-01), Vasudev
Katz et al., Appli. Phys. Lett., vol. 37(2), Jul. 15, 1980, pp. 211-213.
Konogai et al., J. of Applied Physics, vol. 48, No. 10, Oct. 1977, pp. 4389-4394.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for fabrication of monolithic transistor coupled electro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabrication of monolithic transistor coupled electro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabrication of monolithic transistor coupled electro will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-660880

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.