Process for fabrication of dielectric optical waveguide devices

Details Process for fabrication of dielectric optical waveguide devices Process for fabrication of dielectric optical waveguide devices

1976-05-11

1978-01-31

Rutledge, L. DeWayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29582, 156610, 156612, 156613, 156614, 350 96WG, 357 16, 357 18, H01L 21203, H01L 29205

Patent

active

040713830

ABSTRACT:
The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.

REFERENCES:
patent: 3047438 (1962-07-01), Marinace
patent: 3200018 (1965-08-01), Grossman
patent: 3533862 (1970-10-01), Gleim et al.
patent: 3571918 (1971-03-01), Haberecht
patent: 3790902 (1974-02-01), Miller
patent: 3809686 (1974-05-01), Chandross et al.
patent: 3865625 (1975-02-01), Cho et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 3915765 (1975-10-01), Cho et al.
Cho et al., "Molecular Beam Epitaxy of GaAs, Al.sub.x Ga.sub.y-x As and GaP", 1970 Symposium on GaAs, Paper No. 2, p. 18-29.
Ludeke et al., "Fabrication . . . Injection Laser", IBM Tech. Discl. Bull., vol. 15, No. 2, July 1972, pp. 546-547.

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