Process for fabrication of a ferrocapacitor

Details Process for fabrication of a ferrocapacitor Process for fabrication of a ferrocapacitor

2007-04-03

2007-04-03

Menz, Doug (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000

Reexamination Certificate

active

10881338

ABSTRACT:
In a process for fabricating a ferrocapacitor comprising providing ferroelectric PZT elements over an Al2O3layer, the Al2O3layer is covered with a seed layer comprising layers of PZT and TiO2. Then a thicker layer of PZT is formed over the seed layer and crystallized. By this process, the crystallinity of the thick PZT layer is much improved, and its orientation is improved to be in the (111) direction. Furthermore, the seed layer reduces downward diffraction of Pb from the thick PZT layer, such as through the Al2O3into a TEOS structure beneath.

REFERENCES:
patent: 6300653 (2001-10-01), Pan
patent: 7031138 (2006-04-01), Moon et al.

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