Process for fabricating strip optoelectronic devices, particular

Details Process for fabricating strip optoelectronic devices, particular Process for fabricating strip optoelectronic devices, particular

1993-09-09

1996-04-23

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 47, H01S 319

Patent

active

055110886

ABSTRACT:
The invention relates to a process for fabricating a semiconductor optoelectronic device comprising an active region in strip form. The process comprises the stages consisting in 1) producing various layers (120, 130, 140, 150, 160) making up the complete structure of the optoelectronic device by a single epitaxy; 2) etching the structure obtained in stage 1) down to the base of the active layer (130) of the optoelectronic device to isolate a strip in the said active layer; 3) depositing an electrically isolating material of controlled index (170) on the etched zone. The invention also relates to the devices obtained.

REFERENCES:
patent: 4858241 (1989-08-01), Suzuki et al.
patent: 4958202 (1989-09-01), Kinoshita et al.
patent: 4982269 (1991-01-01), Calligaro
patent: 5151914 (1992-09-01), Vidimari et al.
patent: 5164329 (1992-11-01), Moyer
patent: 5253265 (1993-10-01), Seko et al.
patent: 5283209 (1994-02-01), Poingt et al.
J. P. Van Der Zeil et al, "InGaAsP Strip Buried Heterostructure Lasers Grown By MOCVD," IEEE Journal Of Quantum Electronics vol. 27, No. 11, Nov. 1991, New York, pp. 2378-2385.
Patent Abstracts of Japan vol. 6, No. 140 (E-121), Jul. 29, 1982 & JP-A-57 063 883 (Mitsubishi Denki KK), Takimoto.
Patent Abstracts of Japan vol. 9, No. 50 (P-339), Mar. 5, 1985 & JP-A-59 189 305 (Nippon Denshin Denwa Kosha), Osamu.
Patent Abstracts of Japan vol. 3, No. 58 (E-111), May 18, 1979 & JP-A-54 036 179 (Tokyo Shibaura Denki KK), Shibagaki.
Patent Abstracts of Japan vol. 15, No. 246 (E-1081), Jun. 24, 1991 & JP-A-03 078 277 (Seiko Epson Corp), Yoshifumi.
Patent Abstracts of Japan vol. 13, No. 268 (E-775) Jun. 20, 1989 & JP-A-01 059 882 (Omron Tateisi Electronics Co), Akira.
Patent Abstracts of Japan vol. 9, No. 122 (P-359) May 28, 1985 & JP-A-60 008 820 (Hitachi Seisakusho KK), Kouji et al.

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