Process for fabricating stacked trench capacitors of dynamic ram

Details Process for fabricating stacked trench capacitors of dynamic ram Process for fabricating stacked trench capacitors of dynamic ram

1990-06-07

1991-06-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 51, 437 60, 437191, 437193, 437203, 437228, 437233, 437235, 437919, H01L 2170

Patent

active

050266594

ABSTRACT:
A process for fabricating a stacked trench capacitor of a DRAM by way of the anisotropic dry etch technique of CVD silicon. In the process, sidewalls are formed by the anisotropic dry etch of CVD silicon which is formed within a trench for good electrical isolation between trenches, and upon the wet etch of an oxide film, are served as blocking layers to leave an oxide film layer for isolation in the side surfaces of the trenches. In the bottom part of the trenches in which the oxide film is removed, the ion implantation is performed with dopants having an opposite type in relation to the impurity diffusion area of a transistor for isolating the whole of the trenches effectively. Also, on the slant trench in which sharp edges do not exist the thin dielectric layer is formed to eliminate electrical weakspots.

REFERENCES:
patent: 4864375 (1989-09-01), Teng et al.
patent: 4873560 (1989-10-01), Sumami et al.
patent: 4939104 (1990-07-01), Pollack et al.
Toru Kaga et al., "Half Vcc Sheath-Plate Capacitor Dram Cell With Self-Aligned Buried Plate Wiring", IEEE Transaction on Elect. Devices, vol. 35, No. 8, Aug. 88, pp. 1257-1263.
Watanake, H., Kurosawa, K. and Sawada, S., Stacked Capacitor Cells for High-Density Dynamic RAMS, 88 IEDM, 600-603, 1988.
Horiguchi, F., Nitayama, A., Hieda, K., Hamamoto, T., Tsuda, K., Sunoushi, K., Takenouchi, N., Aritome, S., Takato, H. Kimura, M., Yamake, K., Nakase, M., Kamata, Y., and Masuoka, F., Process Technologies for High Density, High Speed 16 Megabit Dynamic RAM, 87 IEDM 324-327, 1987.

Affiliated with

Also associated with

Rating

Process for fabricating stacked trench capacitors of dynamic ram does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating stacked trench capacitors of dynamic ram, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating stacked trench capacitors of dynamic ram will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1039705