Process for fabricating shield for polysilicon load

Details Process for fabricating shield for polysilicon load Process for fabricating shield for polysilicon load

1996-03-13

1998-06-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Resistor

438647, H01L 218244

Patent

active

057633134

ABSTRACT:
A process for fabricating a protective shield for polysilicon loads in SRAM devices is disclosed. The protective shield enables to protect the polyloads from resistance characteristics degradation during the subsequent plasma-based processing steps in the fabrication of the memory device after the polyloads are formed. The polyloads are formed in a photolithography procedure by utilizing a photomask defining the resistive and conductive portions of the polyloads. The process comprises the steps of forming a shield silicon oxide layer over the surface of the memory device in process, including the polyloads, and forming a shield silicon nitride layer on the top of the shield silicon oxide layer. The protective shield is then formed by etching in the shield silicon oxide and nitride layers utilizing a protective photomask. The protective photomask is the same photomask utilized in the formation of the polyloads in the previous photolithography procedural step of the fabrication of the memory device.

REFERENCES:
patent: 4370798 (1983-02-01), Lien et al.
patent: 4408385 (1983-10-01), Mohan Rao et al.
patent: 5177030 (1993-01-01), Lee et al.
patent: 5348901 (1994-09-01), Chen et al.
Ghandhi, "VLSI Fabrication Principles, Silicon and Gallium Arsenide", pp. 420-424, 427-429, 432-435, 1983.

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