Process for fabricating semiconductor devices utilizing a protec

Details Process for fabricating semiconductor devices utilizing a protec Process for fabricating semiconductor devices utilizing a protec

1983-12-23

1985-07-09

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 148174, 148186, 357 42, 357 59, 156653, 1566591, H01L 21265, H01L 2131

Patent

active

045273251

ABSTRACT:
A process is provided for fabricating a semiconductor structure wherein the structure has to be exposed to certain oxidizing conditions during certain of its processing steps, such as its high temperature annealing in an oxidizing ambient. It includes depositing a "sacrificial" layer, such as silicon, to provide a uniformly oxidizing surface during subsequent annealing operations. This sacrificial layer, which oxidizes uniformly, produces an oxide layer which also etches uniformly. Thus, after the annealing is completed, the surface oxide is removed through etching and the sacrificial layer is then also removed through a different etching step.

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patent: 4240845 (1980-12-01), Esch et al.
patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4398338 (1983-08-01), Tickle et al.
patent: 4412375 (1983-11-01), Matthews

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