Process for fabricating semiconductor device with shallow p-type

Details Process for fabricating semiconductor device with shallow p-type Process for fabricating semiconductor device with shallow p-type

1997-10-28

2000-08-29

Warden, Sr., Robert J.

Coating apparatus

Gas or vapor deposition

With treating means

438514, 438528, H01L 21425, C23L 1600

Patent

active

06109207&

ABSTRACT:
A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

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