Process for fabricating semi-conductive oxide between two poly s

Details Process for fabricating semi-conductive oxide between two poly s Process for fabricating semi-conductive oxide between two poly s

1983-04-01

1984-07-10

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576E, 148 15, 357 23, 357 59, 357 92, H01L 2104

Patent

active

044584075

ABSTRACT:
A process for placing non-continuous Dual Electron Injection Structures (DEIS) between two layers of polysilicon used to form an array of poly devices on an integrated circuit substrate. Separate masks are used to define Poly 1 and Poly 2 devices, respectively. The DEIS structure is disposed above the poly 1 devices. A silicon nitride (Si.sub.3 N.sub.4) layer is used to mask the DEIS structure and prevents it from oxidizing during certain processing steps. A thin layer of poly x is placed between the DEIS structure and the Si.sub.3 N.sub.4. The poly x layer forms a buffer and protects the DEIS during an etching step which removes the Si.sub.3 N.sub.4 layer.

REFERENCES:
DiMaria et al., "Dual Electron Injector Structure", Appl. Phys. Lett. 37(1), Jul. 1, 1980, pp. 61-64.
DiMaria et al., "Electrically-Alterable read-only-memory using Si-rich SiO.sub.2 Injectors and a Floating Polycrystalline Silicon Storage Layer" J. Appl. Phys. 52(7), Jul. 1981, pp. 4825-4842.
DiMaria et al., "Dual-Electron-Injector-Structure Electrically Alterable Read-Only-Memory Modeling Studies", IEEE Trans. Elec. Dev., vol. ED 28, No. 9, Sep. 1981, pp. 1047-1053.
Falcony et al., "Study of Charge Trapping as a Degradation Mechanism in Electrically Alterable Read-Only-Memories", J. Appl. Phys. 53(1), Jan. 1982, pp. 43-47.

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