Process for fabricating self-aligned high performance lateral ac

Details Process for fabricating self-aligned high performance lateral ac Process for fabricating self-aligned high performance lateral ac

1988-12-15

1991-10-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, H01L 21266

Patent

active

050554174

ABSTRACT:
A process is described for fabricating a self-aligned lateral silicon-controlled rectifier circuit which includes the steps of forming an insulating layer 18 on a semiconductor substrate which includes an upper N-type region 12, 15 and a lower P-type region 10, and then forming an impurity mask 21 on the insulating layer 18. Portions of the insulating layer 18 adjacent the impurity mask 21 are then removed, and P conductivity type impurity 33 is introduced into the substrate 15 except where it is protected by the impurity mask 21. Finally, N-type impurity is introduced, also adjacent the impurity mask 21. When the structure is annealed, the impurity is diffused partially beneath the impurity mask to create a lateral SCR structure having a narrow PNP base width.

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Bartholomew, R. F. et al., "High Performance NPN with Low Resistance Base Contact Self-Aligned to the Emitter," IBM Technical Disclosure Bulletin (1978) 21(4): 1554-1557.

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