Process for fabricating self-aligned contact studs for semicondu

Details Process for fabricating self-aligned contact studs for semicondu Process for fabricating self-aligned contact studs for semicondu

1992-04-14

1992-11-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437203, 437228, 437984, 156653, 156657, 257752, 257900, H01L 21283, H01L 21311

Patent

active

051660962

ABSTRACT:
A contact stud for semiconductor structure is fabricated by providing a semiconductor substrate having an alignment structure, which includes a sidewall, and the semiconductor structure formed thereon, forming a sidewall spacer contiguous with the semiconductor structure and the sidewall of the alignment structure, depositing an insulating layer contiguous with the sidewall spacer so as to insulate the semiconductor structure, etching the sidewall spacer selectively to the sidewall of the alignment structure, the semiconductor structure and the insulating layer forming a contact window opening for allowing access to the semiconductor structure, and backfilling the contact window opening with a conductive material so as to contact the semiconductor structure for forming the stud.

REFERENCES:
patent: 4374700 (1983-02-01), Scott et al.
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4658496 (1987-04-01), Beinvogl et al.
patent: 4965217 (1990-10-01), Desilets et al.
patent: 4966864 (1990-10-01), Pfiester
patent: 5024970 (1991-06-01), Mori
patent: 5026665 (1991-06-01), Zdebel
patent: 5081060 (1992-01-01), Kim
patent: 5112436 (1992-05-01), Bol

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