Process for fabricating refractory-metal silicide layers in a se

Details Process for fabricating refractory-metal silicide layers in a se Process for fabricating refractory-metal silicide layers in a se

1995-03-28

1996-08-06

Fourson, George

Fishing, trapping, and vermin destroying

437190, 437193, 437 41, H01L 2128

Patent

active

055433626

ABSTRACT:
A process for fabricating refractory-metal silicide layers in a semiconductor device includes the formation of a composite gate electrode (54) and a buried contact structure (56). The composite gate electrode (54) includes a refractory-metal silicide layer (52) separated from a first polycrystalline silicon layer (38) by a diffusion barrier layer (46). The buried contact structure (56) includes a refractory-metal silicide layer (52) separated from a buried contact region (44) of a semiconductor substrate (30) by the diffusion barrier layer (46). The refractor-metal silicide layer (52) is formed by inverting a second polycrystalline silicon layer (48) to a refractory-metal silicide material while preventing the diffusion of refractory-metal atoms into underlying silicon regions.

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