Process for fabricating read only memories, with programming ste

Fishing – trapping – and vermin destroying

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437 12, 437 48, 437240, H01L 218246

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057364206

ABSTRACT:
A novel process for fabricating semiconductor devices including read only memory transistor cells. The memory cells are programmed to either a logical one or logical zero state by adjusting the dopant levels in their channel regions, with a programming implantation step being selectively performed on those ones of the memory cell transistors which are to be programmed, with the programming implantation step being performed midway through the fabrication process. By performing this programming step midway through the process, certain advantages are obtained regarding improved turn around time from the receipt of a customer's order, and yet the problems of incomplete activation of implanted dopants and ineffective gettering by the use of low dopant concentration gettering layers is avoided.

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