Process for fabricating polysilicon resistor in polycide line

Details Process for fabricating polysilicon resistor in polycide line Process for fabricating polysilicon resistor in polycide line

1985-01-31

1986-08-12

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577R, 29578, 29591, 148187, H01L 21425, H01L 2144

Patent

active

046047891

ABSTRACT:
In making a polysilicon resistor in a polycide line, a thick oxide is established selectively to shield lightly doped polysilicon first from heavy doping and then from the silicide. Before adding silicide, a selected region of polysilicon broader than and including the site of the poly resistor is exposed, lightly doped, and then oxidized to establish a thick oxide, while other areas are protected by nitride. Then the nitride and any thin oxide on top of the polysilicon outside the broad area are removed, and the exposed polysilicon is heavily doped for low resistivity. The thick oxide shields the underlying lightly doped polysilicon from the heavy doping. Silicide is then added. Definition of the polysilicon resistor follows preferably using a two step process. When the silicide is etched, the thick oxide on top of the broad polysilicon area acts as an etch stop. Then the thick oxide and polysilicon resistor are etched.

REFERENCES:
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patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4462149 (1984-07-01), Schwabe
patent: 4475964 (1984-10-01), Arizumi et al.
patent: 4503601 (1985-03-01), Chiao
patent: 4541166 (1985-09-01), Yamazaki

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