Process for fabricating polycrystalline silicon film resistors

Details Process for fabricating polycrystalline silicon film resistors Process for fabricating polycrystalline silicon film resistors

1982-04-01

1984-08-28

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 357 34, 357 51, 357 91, H01L 21263, H01L 2126, H01L 21425

Patent

active

044675194

ABSTRACT:
A method for fabricating polycrystalline silicon resistors is described which includes deposition of a polycrystalline silicon layer of very fine grain size upon an insulator surface, followed by ion implantation of boron equal to or slightly in excess of the solubility limit of the polycrystalline silicon. This ion implantation is normally done using a screen silicon dioxide surface layer. The structure may be annealed at temperatures of between about 800.degree. C. to 1100.degree. C. for 15 to 180 minutes to control the grain size of the polycrystalline silicon layer, homogenize the distribution of the boron ions throughout the entire film thickness and to raise the concentration of the boron in the silicon grains to the solid solubility limit. The suitable electrical contacts are now made to the polycrystalline silicon layer to form the resistor.

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