Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-10-26
1978-09-12
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 136 89TF, 136 89CD, 357 30, 357 59, H01L 2136, H01L 21477, H01L 2714
Patent
active
041135318
ABSTRACT:
The specification describes a compound semiconductor solar cell and fabrication process therefor wherein both the P and N-type layers of the cell are polycrystalline semiconducting material and have large crystallites with grain boundaries of similar dimensions and spacings. These grain boundaries are spaced apart by a distance substantially greater than the optical absorption length, .LAMBDA., in one of the layers and by an amount sufficient to permit substantial numbers of photon-generated carriers in that one layer to cross the PN junction between the layers. Thus, substantial power is generated without the requirement for using expensive monocrystalline semiconductive materials.
REFERENCES:
patent: 3699401 (1972-10-01), Tietjen
Hovel H. J., "Semiconductors and Semimetals, Volume II, Solar Cells", Academic Press, N. Y., 1975, pp. 217-222.
Bachmann et al., "Preparation of P-Type InP -- Vapor Deposition."J. Electrochem. Soc., vol. 123, No. 10, Oct. 1976, pp. 1509-1513.
Fraas et al., "InP Epitaxial Thin-Film -- Reactive Deposition", Applied Physics Letters, vol. 28, No. 8, Apr. 15 1976, pp. 415-417.
H. Hovel, "Semiconductors & Semimetals, Volume II, Solar Cells," Academic Press, N. Y., 1975, pp. 103-111.
K. J. Bachmann et al., "Polycrystalline Thin-Film InP-CdS Solar Cells", Appl. Phys. Letters, vol. 29, No. 2, July 1976, pp. 121-123.
Fraas Lewis M.
Zanio Kenneth W.
Bethurum William J.
Hughes Aircraft Company
MacAllister W. H.
Rutledge L. Dewayne
Saba W. G.
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