Process for fabricating planar SCR structure

Details Process for fabricating planar SCR structure Process for fabricating planar SCR structure

1972-07-21

1976-10-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

357 38, H01L 2122

Patent

active

039869040

ABSTRACT:
A low resistivity anode region is formed relative to the much higher resistivity gate region in a planar semiconductor controlled rectifier (SCR) structure. The low resistivity anode region is achieved by diffusing an appropriate impurity in high concentration in a distinct diffusion step separate from the diffusion of the like conductivity type gate region. The result is a desirable optimization of certain device parameters, viz., r.sub.on and V.sub.f.

REFERENCES:
patent: 3460006 (1969-08-01), Strull
patent: 3489961 (1970-01-01), Frescura et al.
patent: 3575646 (1971-04-01), Karcher

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