Process for fabricating phase shift mask and process of semicond

Details Process for fabricating phase shift mask and process of semicond Process for fabricating phase shift mask and process of semicond

1995-02-06

1997-10-14

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430311, 430296, 430396, 430942, 2504911, 2504912, G03F 700

Patent

active

056770928

ABSTRACT:
When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5278816 (1994-01-01), Russell
patent: 5442714 (1995-08-01), Iguchi
Hirai, et al. "Automatic Pattern Generation System for Phase Shifting Mask" in Digest of Technical Papers-1991 Symposium on VLSI Technology, pp. 95-96 .

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