Process for fabricating multi-level-metal integrated circuits at

Metal working – Method of mechanical manufacture – Electrical device making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29589, 29591, 29578, 1566611, 357 71, H01L 2147

Patent

active

045921326

ABSTRACT:
Inter-layer electrical shorting between layers of conductors of an integrated circuit caused by "hillocks" in the bottom layer is prevented by the use of a double layer photoresist coatings atop the insulating layer that separates the metal layers. The double layer photoresist insures that irregularities in the dielectric layer caused by hillocks in the underlying insulating layer do not cause a break in the photoresist and a subsequent undesired etching of a spurious "via" through the dielectric layer.

REFERENCES:
patent: 4398964 (1983-08-01), Malwah
patent: 4409319 (1983-10-01), Colacino et al.
patent: 4415606 (1983-11-01), Cynkar et al.
patent: 4517731 (1985-05-01), Khan et al.
patent: 4523975 (1985-06-01), Groves et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for fabricating multi-level-metal integrated circuits at does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating multi-level-metal integrated circuits at, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating multi-level-metal integrated circuits at will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1226155

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.