Process for fabricating mixed signal integrated circuit

Details Process for fabricating mixed signal integrated circuit Process for fabricating mixed signal integrated circuit

1999-07-28

2000-03-07

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438393, 438396, 438250, 438252, 438239, H01L 2120, H01L 218242

Patent

active

060339659

ABSTRACT:
A process for fabricating a mixed signal integrated circuit on a substrate, wherein the substrate is partially covered with a field oxide layer. An oxide layer is formed over a portion of the substrate, wherein the portion of the substrate is not covered with the field oxide layer. First impurities are implanted into the substrate, wherein the first impurities damage the oxide layer. A buffer layer is formed over the oxide layer. A polysilicon layer is formed over the buffer layer. Second impurities are implanted into the polysilicon layer, wherein the buffer layer prevents the oxide layer form being damaged by the second impurities. The polysilicon layer is etched to remove the polysilicon layer, wherein the buffer layer prevents the oxide layer and the substrate from being etched. The portion of buffer layer and the damaged oxide layer over the substrate are removed. The gate oxide layer is formed over the substrate.

REFERENCES:
patent: 5434098 (1995-07-01), Chang

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