Process for fabricating low defect polysilicon

Details Process for fabricating low defect polysilicon Process for fabricating low defect polysilicon

1990-04-12

1991-01-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437967, 437228, 156653, H01L 21465

Patent

active

049818112

ABSTRACT:
A method of removing natural oxides and other contaminants on silicon or polysilicon and then depositing polysilicon thereon. The natural oxide is substantially removed from the exposed silicon with an anhydrous etchant and then the polysilicon is deposited on the exposed silicon. The etching and depositing steps occur in the same reactor chamber (in-situ). A portion of the end of the selective etching step overlaps with a portion of the beginning of the polysilicon deposition step to achieve an interface between the underlying silicon and the deposited polysilicon that is substantially free of native oxides and other contaminants.

REFERENCES:
patent: 4056642 (1977-11-01), Saxena
patent: 4243865 (1981-02-01), Saxena
patent: 4361461 (1982-11-01), Chang
patent: 4497683 (1985-02-01), Celler et al.
patent: 4546535 (1985-10-01), Shepard
patent: 4549926 (1985-10-01), Corboy et al.
patent: 4578142 (1986-03-01), Corboy et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4778776 (1988-10-01), Tong et al.
"Interation of a Silicon Surface with Fluorine and Hydrogen Fluoride," Russian Journal of Physical Chemistry, vol. 40, No. 5, May 1966; V. V. Tyapkina and N. S. Guseva, pp. 573 through 576.
"Dielectric and Polysilicon Film Deposition," VLSI Technology, 1983, McGraw-Hill Book Company, pp. 93 through 105.

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