Process for fabricating integrated circuits having shallow junct

Details Process for fabricating integrated circuits having shallow junct Process for fabricating integrated circuits having shallow junct

1990-06-08

1991-04-16

Hearn, Brain E.

Fishing, trapping, and vermin destroying

437192, 437194, H01L 21441

Patent

active

050082175

ABSTRACT:
Direct contact to shallow junctions in integrated circuits and interconnection between these contacts is achievable by utilizing a specific aluminum CVD process. In this process the aluminum is deposited utilizing a triisobutyl aluminum precursor onto a substrate having a nucleation layer, e.g. a titanium nitride layer. By appropriate choice of this nucleation layer to control the nucleation of the depositing aluminum, suitable contact is made while avoiding void defects present in the absence of such layer.

REFERENCES:
patent: 4745089 (1988-05-01), Orban
patent: 4956204 (1990-09-01), Amazawa et al.

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