Process for fabricating integrated circuit containing shallow ju

Details Process for fabricating integrated circuit containing shallow ju Process for fabricating integrated circuit containing shallow ju

1993-12-27

1995-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437160, 437950, H01L 21225

Patent

active

054787769

ABSTRACT:
The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 microns or less. The substrate also has a silicon dioxide material thereon. A dopant source is applied over a junction on the substrate. The substrate is then rapid thermal annealed to drive the dopant source into the substrate. The dopant source is then removed from the substrate using an etchant that does not contain a significant amount of HF.

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