Process for fabricating inexpensive high performance solar cells

Details Process for fabricating inexpensive high performance solar cells Process for fabricating inexpensive high performance solar cells

1976-11-15

1978-07-18

Ozaki, T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 136 89CC, 357 30, H01L 21225

Patent

active

041013514

ABSTRACT:
Silicon solar cells may be made from either "P" type substrates with "N" type dopants to form the geometries or with "N" type substrates and "P" type dopants forming the junction. This invention relates to the dopant species employed, the improved method of application and junction formation, formation of insitu anti-reflective coatings, and improved metallization processing for silicon solar cells. The invention does not affect preparation of the silicon substrate prior to diffusion steps, and is applicable both to planar solar cells and to vertical-multijunction cells. This invention discloses an alternate process of junction formation using arsenic as dopant. The process is uniquely different in the fact that it simplifies the number of process steps by using the doped oxide for junction formation, metallization mask and as an anti-reflection surface layer.

REFERENCES:
patent: RE28610 (1975-11-01), Lindmayer
patent: 3359137 (1967-12-01), Kaye et al.
patent: 3361594 (1968-01-01), Iles et al.
patent: 3755015 (1973-08-01), Redington et al.
patent: 3915766 (1975-10-01), Pollack

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