Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-08-07
1979-10-16
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 118 50, 118719, 118730, 148174, 156611, 156612, 156613, 357 16, 357 30, 357 61, 427 69, 427 81, 427 87, 427248R, H01L 21205, H01L 2118
Patent
active
041712358
ABSTRACT:
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium arsenide substrate, and the deposition of a layer of germanium establishes a second PN junction in Ge of a different bandgap energy on the other side of the GaAs substrate. The two PN junctions are responsive respectively to different wavelength ranges of solar energy to thus enhance the power output capability of a single wafer (substrate) solar cell. Utilization of the Group IV element germanium, as contrasted to compound semiconductors, simplifies the process control requirements relative to known prior art compound semiconductor processes, and germanium also provides a good crystal lattice match with gallium arsenide and thereby maximizes process yields. This latter feature also minimizes losses caused by the crystal defects associated with the interface between two semiconductors.
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Fraas Lewis M.
Knechtli Ronald C.
Zanio Kenneth R.
Bethurum William J.
Hughes Aircraft Company
MacAllister W. H.
Rutledge L. Dewayne
Saba W. G.
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