Process for fabricating field effect transistors

Details Process for fabricating field effect transistors Process for fabricating field effect transistors

1984-08-07

1985-12-24

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29591, 148DIG82, 357 22, 357 233, H01L 21265, H01L 2980

Patent

active

045596930

ABSTRACT:
A process for fabricating a field effect transistors having a source electrode, a drain electrode and a gate electrode, including the steps of forming first to third conjoined narrow portions of thin film on an active region of a semiconductor, the second thin film portion having a different etching rate from the first and third and implanting ions into the active region to form a high carrier concentration region by using the conjoined films as a mask. The thickness of the second film portion determines the gate electrode length and the thickness of the third film portion determines the distance between the high carrier concentration region at the source side and the gate electrode.

REFERENCES:
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4426767 (1984-01-01), Swanson et al.
Proc. of 44th Autumn Meeting of the Jap. Soc. of Appl. Phys., and of the Related Soc. p. 543 26p-E-13, Reporters: Terada et al., 1983.
Proc. of 44th Autumn Meeting of the Jap. Soc. of Appl. Phys. and of the Related Soc. p. 509 25a-J-10, Reporters: Katano et al., 1983.

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