Process for fabricating electron emitting device, electron...

Details Process for fabricating electron emitting device, electron... Process for fabricating electron emitting device, electron...

2006-08-25

2008-10-14

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S020000, C438S706000, C438S745000

Reexamination Certificate

active

07435689

ABSTRACT:
A process for fabricating an electron emitting device comprises a cathode electrode and a gate electrode are laminated through an insulating layer and an electron emitting film on the cathode electrode located in a gate hole penetrating through the gate electrode and the insulating layer. Wherein, a second hole penetrating through at least the gate electrode between the insulating layer and the gate electrode is juxtaposed with a first hole as a gate hole is formed, and the insulating layer between the second hole and the first hole in which the electron emitting film is deposited to the inner wall surface is etched until the first hole and the second hole are communicated with each other. Thereby, electron emitting film material is removed form the hole to reduce a leakage current.

REFERENCES:
patent: 6991949 (2006-01-01), Muroyama et al.
patent: 7074102 (2006-07-01), Teramoto
patent: 7109663 (2006-09-01), Fujiwara et al.
patent: 2003/0067259 (2003-04-01), Nishimura
patent: 2006/0061289 (2006-03-01), Fujiwara et al.
patent: 2006/0125370 (2006-06-01), Nishimura et al.
patent: 8-96704 (1996-04-01), None
patent: 8-264109 (1996-10-01), None
patent: 2000-195448 (2000-07-01), None

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